PSEUDO-QUATERNARY GAINASP SEMICONDUCTORS - A NEW GA0.47IN0.53AS/INP GRADED GAP SUPERLATTICE AND ITS APPLICATIONS TO AVALANCHE PHOTODIODES

被引：51

作者：

CAPASSO, F ^{[1
]}

COX, HM ^{[1
]}

HUTCHINSON, AL ^{[1
]}

OLSSON, NA ^{[1
]}

HUMMEL, SG ^{[1
]}

机构：

[1] BELL COMMUN RES,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 11期

关键词：

D O I：

10.1063/1.95094

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1193 / 1195

页数：3

共 12 条

[1] NEW RECTIFYING SEMICONDUCTOR STRUCTURE BY MOLECULAR-BEAM EPITAXY
ALLYN, CL
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (05) : 373 - 376
[2] HIGH-PERFORMANCE AVALANCHE PHOTO-DIODE WITH SEPARATE ABSORPTION GRADING AND MULTIPLICATION REGIONS
CAMPBELL, JC
DENTAI, AG
HOLDEN, WS
KASPER, BL
[J]. ELECTRONICS LETTERS, 1983, 19 (20) : 818 - 820
[3] NEW TRANSIENT ELECTRICAL-POLARIZATION PHENOMENON IN SAWTOOTH SUPER-LATTICES
CAPASSO, F
LURYI, S
TSANG, WT
BETHEA, CG
LEVINE, BF
[J]. PHYSICAL REVIEW LETTERS, 1983, 51 (25) : 2318 - 2321
[4] STAIRCASE SOLID-STATE PHOTOMULTIPLIERS AND AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO
CAPASSO, F
TSANG, WT
WILLIAMS, GF
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) : 381 - 390
[5] LOW-DARK-CURRENT LOW-VOLTAGE 1.3-1.6 MU-M AVALANCHE PHOTODIODE WITH HIGH-LOW ELECTRIC-FIELD PROFILE AND SEPARATE ABSORPTION AND MULTIPLICATION REGIONS BY MOLECULAR-BEAM EPITAXY
CAPASSO, F
CHO, AY
FOY, PW
[J]. ELECTRONICS LETTERS, 1984, 20 (15) : 635 - 637
[6] CAPASSO F, 1983, IEDM, V83, P468
[7] COOPER JA, 1982, IEEE ELECTRON DEVICE, V3, P497
[8] COX HM, 1984, J ACOUST GROWTH DEC
[9] OPTICAL-RESPONSE TIME OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES
FORREST, SR
KIM, OK
SMITH, RG
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (01) : 95 - 98
[10] COMPOSITION CONTROL OF ALXGA1-XAS AND NEW TYPE OF SUPER-LATTICE BY PULSED MOLECULAR-BEAM
KAWABE, M
MATSUURA, N
INUZUKA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (07): : L447 - L448

← 1 2 →