NEW TRANSIENT ELECTRICAL-POLARIZATION PHENOMENON IN SAWTOOTH SUPER-LATTICES

[1] NEW RECTIFYING SEMICONDUCTOR STRUCTURE BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (05) : 373 - 376

[2] ASPNES D, COMMUNICATION

[3] ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO [J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 38 - 40

[4] STAIRCASE SOLID-STATE PHOTOMULTIPLIERS AND AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) : 381 - 390

[5] BAND-GAP ENGINEERING VIA GRADED GAP, SUPER-LATTICE, AND PERIODIC DOPING STRUCTURES - APPLICATIONS TO NOVEL PHOTODETECTORS AND OTHER DEVICES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 457 - 461

[6] OBSERVATION OF SEMICONDUCTOR-SEMIMETAL TRANSITION IN INAS-GASB SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1979, 35 (12) : 939 - 942

[7] COOPER JA, 1982, IEEE ELECTRON DEVICE, V3, P497

[8] DIRECT OBSERVATION OF SUPERLATTICE FORMATION IN A SEMICONDUCTOR HETEROSTRUCTURE [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (21) : 1327 - 1330

[9] NEW TRANSPORT PHENOMENON IN A SEMICONDUCTOR SUPERLATTICE [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (08) : 495 - 498

[10] MEASUREMENT OF HIGH ELECTRON-DRIFT VELOCITY IN A SUB-MICRON, HEAVILY DOPED GRADED GAP ALXGA1-XAS LAYER [J]. APPLIED PHYSICS LETTERS, 1983, 42 (09) : 769 - 771

[1] NEW RECTIFYING SEMICONDUCTOR STRUCTURE BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (05) : 373 - 376

[2] ASPNES D, COMMUNICATION

[3] ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO [J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 38 - 40

[4] STAIRCASE SOLID-STATE PHOTOMULTIPLIERS AND AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) : 381 - 390

[5] BAND-GAP ENGINEERING VIA GRADED GAP, SUPER-LATTICE, AND PERIODIC DOPING STRUCTURES - APPLICATIONS TO NOVEL PHOTODETECTORS AND OTHER DEVICES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 457 - 461

[6] OBSERVATION OF SEMICONDUCTOR-SEMIMETAL TRANSITION IN INAS-GASB SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1979, 35 (12) : 939 - 942

[7] COOPER JA, 1982, IEEE ELECTRON DEVICE, V3, P497

[8] DIRECT OBSERVATION OF SUPERLATTICE FORMATION IN A SEMICONDUCTOR HETEROSTRUCTURE [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (21) : 1327 - 1330

[9] NEW TRANSPORT PHENOMENON IN A SEMICONDUCTOR SUPERLATTICE [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (08) : 495 - 498

[10] MEASUREMENT OF HIGH ELECTRON-DRIFT VELOCITY IN A SUB-MICRON, HEAVILY DOPED GRADED GAP ALXGA1-XAS LAYER [J]. APPLIED PHYSICS LETTERS, 1983, 42 (09) : 769 - 771