STAIRCASE SOLID-STATE PHOTOMULTIPLIERS AND AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO

[1] HIGH-SPEED PHOTODETECTORS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1335 - +

[2] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &

[3] SINGLE-CARRIER-TYPE DOMINATED IMPACT IONIZATION IN MULTILAYER STRUCTURES [J]. ELECTRONICS LETTERS, 1982, 18 (09) : 375 - 376

[4] ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO [J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 38 - 40

[5] THE CHANNELING AVALANCHE PHOTO-DIODE - A NOVEL ULTRA-LOW-NOISE INTERDIGITATED P-N-JUNCTION DETECTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) : 1388 - 1395

[6] INTERDIGITATED PN JUNCTION DEVICE WITH NOVEL CAPACITANCE VOLTAGE CHARACTERISTIC, ULTRALOW CAPACITANCE AND LOW PUNCH-THROUGH VOLTAGE [J]. ELECTRONICS LETTERS, 1982, 18 (18) : 760 - 761

[7] Capasso F., 1982, International Electron Devices Meeting. Technical Digest, P334

[8] NEW ULTRA-LOW-NOISE AVALANCHE PHOTO-DIODE WITH SEPARATED ELECTRON AND HOLE AVALANCHE REGIONS [J]. ELECTRONICS LETTERS, 1982, 18 (01) : 12 - 13

[9] CHANNELING PHOTO-DIODE - A NEW VERSATILE INTERDIGITATED P-N-JUNCTION PHOTODETECTOR [J]. APPLIED PHYSICS LETTERS, 1982, 41 (10) : 944 - 946

[10] CAPASSO F, 1982, I PHYS C SER, V63, P473

[1] HIGH-SPEED PHOTODETECTORS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1335 - +

[2] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &

[3] SINGLE-CARRIER-TYPE DOMINATED IMPACT IONIZATION IN MULTILAYER STRUCTURES [J]. ELECTRONICS LETTERS, 1982, 18 (09) : 375 - 376

[4] ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO [J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 38 - 40

[5] THE CHANNELING AVALANCHE PHOTO-DIODE - A NOVEL ULTRA-LOW-NOISE INTERDIGITATED P-N-JUNCTION DETECTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) : 1388 - 1395

[6] INTERDIGITATED PN JUNCTION DEVICE WITH NOVEL CAPACITANCE VOLTAGE CHARACTERISTIC, ULTRALOW CAPACITANCE AND LOW PUNCH-THROUGH VOLTAGE [J]. ELECTRONICS LETTERS, 1982, 18 (18) : 760 - 761

[7] Capasso F., 1982, International Electron Devices Meeting. Technical Digest, P334

[8] NEW ULTRA-LOW-NOISE AVALANCHE PHOTO-DIODE WITH SEPARATED ELECTRON AND HOLE AVALANCHE REGIONS [J]. ELECTRONICS LETTERS, 1982, 18 (01) : 12 - 13

[9] CHANNELING PHOTO-DIODE - A NEW VERSATILE INTERDIGITATED P-N-JUNCTION PHOTODETECTOR [J]. APPLIED PHYSICS LETTERS, 1982, 41 (10) : 944 - 946

[10] CAPASSO F, 1982, I PHYS C SER, V63, P473