CHANNELING PHOTO-DIODE - A NEW VERSATILE INTERDIGITATED P-N-JUNCTION PHOTODETECTOR

被引：15

作者：

CAPASSO, F

LOGAN, RA

TSANG, WT

HAYES, JR

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 10期

关键词：

D O I：

10.1063/1.93344

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：944 / 946

页数：3

相关论文

共 5 条

[1] INTERDIGITATED PN JUNCTION DEVICE WITH NOVEL CAPACITANCE VOLTAGE CHARACTERISTIC, ULTRALOW CAPACITANCE AND LOW PUNCH-THROUGH VOLTAGE
CAPASSO, F
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TSANG, WT
[J]. ELECTRONICS LETTERS, 1982, 18 (18) : 760 - 761
[2] NEW ULTRA-LOW-NOISE AVALANCHE PHOTO-DIODE WITH SEPARATED ELECTRON AND HOLE AVALANCHE REGIONS
CAPASSO, F
[J]. ELECTRONICS LETTERS, 1982, 18 (01) : 12 - 13
[3] CAPASSO F, UNPUB IEEE T ELECTRO
[4] CAPASSO F, 1972, PHYS STATUS SOLIDI B, V52, P533
[5] SINGLE-MODE OPERATION OF BURIED HETEROSTRUCTURE LASERS BY LOSS STABILIZATION
HENRY, CH
LOGAN, RA
MERRITT, FR
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (11) : 2196 - 2204