SINGLE-MODE OPERATION OF BURIED HETEROSTRUCTURE LASERS BY LOSS STABILIZATION

被引：37

作者：

HENRY, CH

LOGAN, RA

MERRITT, FR

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 11期

关键词：

D O I：

10.1109/JQE.1981.1070673

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：2196 / 2204

页数：9

相关论文

共 9 条

[1] MODE SELECTION IN GAAS INJECTION LASERS RESULTING FROM FRESNEL REFLECTION
GORDON, EI
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (07) : 772 - 776
[2] MEASUREMENT OF GAIN AND ABSORPTION-SPECTRA IN ALGAAS BURIED HETEROSTRUCTURE LASERS
HENRY, CH
LOGAN, RA
MERRITT, FR
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3042 - 3050
[3] PULSATIONS IN ALXGA1-XAS BURIED HETEROSTRUCTURE LASERS CAUSED BY THE HEATING OF DEFECTS
HENRY, CH
LOGAN, RA
MERRITT, FR
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1560 - 1573
[4] ANODIC-OXIDATION OF GAAS IN AQUEOUS H2O2 SOLUTION
LOGAN, RA
SCHWARTZ, B
SUNDBURG, WJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) : 1385 - 1390
[5] MODE CONVERSION CAUSED BY SURFACE IMPERFECTIONS OF A DIELECTRIC SLAB WAVEGUIDE
MARCUSE, D
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1969, 48 (10): : 3187 - +
[6] BURIED-HETEROSTRUCTURE ALGAAS LASERS
SAITO, K
ITO, R
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 205 - 215
[7] GAAS-ALXGA1-XAS STRIP BURIED HETEROSTRUCTURE LASERS
TSANG, WT
LOGAN, RA
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (06) : 451 - 469
[8] GAAS-ALXGA1-X AS BURIED-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY WITH AL0.65GA0.35AS (GE-DOPED) LIQUID-PHASE EPITAXY OVERGROWN LAYER FOR CURRENT INJECTION CONFINEMENT
TSANG, WT
LOGAN, RA
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 730 - 733
[9] SPECTRAL BROADENING OF PULSATING ALXGA1-XAS DOUBLE HETEROSTRUCTURE LASERS
VANDERZIEL, JP
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (11) : 1277 - 1281