BURIED-HETEROSTRUCTURE ALGAAS LASERS

被引：78

作者：

SAITO, K

ITO, R

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1980年 / 16卷 / 02期

关键词：

D O I：

10.1109/JQE.1980.1070459

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：205 / 215

页数：11

共 32 条

[1] CHANNELED-SUBSTRATE PLANAR STRUCTURE (ALGA)AS INJECTION-LASERS [J].

AIKI, K ;

NAKAMURA, M ;

KURODA, T ;

UMEDA, J .

APPLIED PHYSICS LETTERS, 1977, 30 (12) :649-651

[2]

Alferov Zh. I., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P1826

[3] GAAS-ALXGA1-XAS HETEROSTRUCTURE LASER WITH SEPARATE OPTICAL AND CARRIER CONFINEMENT [J].

CASEY, HC ;

PANISH, MB ;

SCHLOSSE.WO ;

PAOLI, TL .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :322-333

[4] REFRACTIVE-INDEX OF ALXGA1-X AS BETWEEN 1.2 AND 1.8 EV [J].

CASEY, HC ;

SELL, DD ;

PANISH, MB .

APPLIED PHYSICS LETTERS, 1974, 24 (02) :63-65

[5] EFFECTS OF LATERAL MODE AND CARRIER DENSITY PROFILE ON DYNAMIC BEHAVIORS OF SEMICONDUCTOR-LASERS [J].

CHINONE, N ;

AIKI, K ;

NAKAMURA, M ;

ITO, R .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (08) :625-631

[6] SEMICONDUCTOR-LASERS WITH A THIN ACTIVE LAYER (GREATER-THAN 0.1 MU-M) FOR OPTICAL COMMUNICATIONS [J].

CHINONE, N ;

NAKASHIMA, H ;

IKUSHIMA, I ;

ITO, R .

APPLIED OPTICS, 1978, 17 (02) :311-315

[7]

CHINONE N, UNPUBLISHED

[8] CALCULATION OF FAR-FIELD HALFPOWER WIDTH AND MIRROR REFLECTION COEFFICIENTS OF DOUBLE-HETEROSTRUCTURE LASERS [J].

DEWAARD, PJ .

ELECTRONICS LETTERS, 1975, 11 (01) :11-12

[9]

DOI A, COMMUNICATION

[10] CONTINUOUSLY OPERATED (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS WITH 70-DEGREES-C LIFETIMES AS LONG AS 2 YEARS [J].

HARTMAN, RL ;

SCHUMAKER, NE ;

DIXON, RW .

APPLIED PHYSICS LETTERS, 1977, 31 (11) :756-759

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