EFFECTS OF LATERAL MODE AND CARRIER DENSITY PROFILE ON DYNAMIC BEHAVIORS OF SEMICONDUCTOR-LASERS

被引：78

作者：

CHINONE, N

AIKI, K

NAKAMURA, M

ITO, R

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1978年 / 14卷 / 08期

关键词：

D O I：

10.1109/JQE.1978.1069849

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：625 / 631

页数：7

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[1] TRANSVERSE MODE STABILIZED ALX GA1-XAS INJECTION-LASERS WITH CHANNELED-SUBSTRATE-PLANAR STRUCTURE
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[4] VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS
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[6] MEASUREMENT OF MINORITY-CARRIER LIFETIME DURING GRADUAL DEGRADATION OF GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE LASERS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (03) : 575 - 576
[8] SEMICONDUCTOR-LASERS WITH A THIN ACTIVE LAYER (GREATER-THAN 0.1 MU-M) FOR OPTICAL COMMUNICATIONS
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[J]. APPLIED OPTICS, 1978, 17 (02): : 311 - 315
[9] LIMITATIONS OF POWER OUTPUTS FROM CONTINUOUSLY OPERATING GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE LASERS
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[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 785 - 786
[10] INCORPORATION OF ZINC INTO EPITAXIAL GAAS USING DIETHYL ZINC
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (2P1) : 199 - &