GAAS-ALXGA1-XAS HETEROSTRUCTURE LASER WITH SEPARATE OPTICAL AND CARRIER CONFINEMENT

被引:55
作者
CASEY, HC [1 ]
PANISH, MB [1 ]
SCHLOSSE.WO [1 ]
PAOLI, TL [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1063/1.1662980
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:322 / 333
页数:12
相关论文
共 31 条
  • [1] THERMAL-CONDUCTIVITY OF GA1-XALXAS ALLOYS
    AFROMOWITZ, MA
    [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1292 - 1294
  • [2] Alferov Zh. I., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P1826
  • [3] ALFEROV ZI, 1971, SOV PHYS SEMICOND+, V4, P1573
  • [4] BIARD JR, 1964, T METALL SOC AIME, V230, P286
  • [5] REFRACTIVE-INDEX OF ALXGA1-X AS BETWEEN 1.2 AND 1.8 EV
    CASEY, HC
    SELL, DD
    PANISH, MB
    [J]. APPLIED PHYSICS LETTERS, 1974, 24 (02) : 63 - 65
  • [6] CASEY HC, 1973, J APPL PHYS, V44, P5469
  • [7] CASEY HC, 1972, J APPL PHYS, V43, P2827
  • [8] DAWSON LR, 1973, J ELECTROCHEM SOC, V120, pC181
  • [9] EDEN RC, 1967, SEL67038 STANF U EL
  • [10] JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE
    HAYASHI, I
    PANISH, MB
    FOY, PW
    SUMSKI, S
    [J]. APPLIED PHYSICS LETTERS, 1970, 17 (03) : 109 - &