SINGLE-CARRIER-TYPE DOMINATED IMPACT IONIZATION IN MULTILAYER STRUCTURES

被引：45

作者：

BLAUVELT, H

MARGALIT, S

YARIV, A

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 09期

关键词：

D O I：

10.1049/el:19820257

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：375 / 376

页数：2

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[1] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS
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[2] ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO
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[5] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON
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