BAND-GAP ENGINEERING VIA GRADED GAP, SUPER-LATTICE, AND PERIODIC DOPING STRUCTURES - APPLICATIONS TO NOVEL PHOTODETECTORS AND OTHER DEVICES

被引：71

作者：

CAPASSO, F

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.582627

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：457 / 461

页数：5

相关论文

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[1] ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO
CAPASSO, F
TSANG, WT
HUTCHINSON, AL
WILLIAMS, GF
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 38 - 40
[2] THE CHANNELING AVALANCHE PHOTO-DIODE - A NOVEL ULTRA-LOW-NOISE INTERDIGITATED P-N-JUNCTION DETECTOR
CAPASSO, F
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) : 1388 - 1395
[3] AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO - TOWARDS A SOLID-STATE PHOTOMULTIPLIER
CAPASSO, F
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (01) : 424 - 428
[4] INTERDIGITATED PN JUNCTION DEVICE WITH NOVEL CAPACITANCE VOLTAGE CHARACTERISTIC, ULTRALOW CAPACITANCE AND LOW PUNCH-THROUGH VOLTAGE
CAPASSO, F
LOGAN, RA
TSANG, WT
[J]. ELECTRONICS LETTERS, 1982, 18 (18) : 760 - 761
[5] NEW ULTRA-LOW-NOISE AVALANCHE PHOTO-DIODE WITH SEPARATED ELECTRON AND HOLE AVALANCHE REGIONS
CAPASSO, F
[J]. ELECTRONICS LETTERS, 1982, 18 (01) : 12 - 13
[6] CHANNELING PHOTO-DIODE - A NEW VERSATILE INTERDIGITATED P-N-JUNCTION PHOTODETECTOR
CAPASSO, F
LOGAN, RA
TSANG, WT
HAYES, JR
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (10) : 944 - 946
[7] CAPASSO F, 1982, 1982 IEEE SPEC C LIG, P166
[8] CAPASSO F, 1983, IEEE T ELECTRON DEV, V30, P6
[9] CAPASSO F, 1982, 1982 INT EL DEV M SA, P334
[10] CAPASSO F, 1982, I PHYS C SER, V63, P473