AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO - TOWARDS A SOLID-STATE PHOTOMULTIPLIER

被引：15

作者：

CAPASSO, F

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 01期

关键词：

D O I：

10.1109/TNS.1983.4332303

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：424 / 428

页数：5

共 10 条

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CAPASSO F, 1982, I PHYS C SER, V63, P473

[8] IMPACT IONIZATION IN MULTILAYERED HETEROJUNCTION STRUCTURES [J].

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[10] THE GRADED BANDGAP MULTILAYER AVALANCHE PHOTO-DIODE - A NEW LOW-NOISE DETECTOR [J].

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