LOW-DARK-CURRENT LOW-VOLTAGE 1.3-1.6 MU-M AVALANCHE PHOTODIODE WITH HIGH-LOW ELECTRIC-FIELD PROFILE AND SEPARATE ABSORPTION AND MULTIPLICATION REGIONS BY MOLECULAR-BEAM EPITAXY

被引：22

作者：

CAPASSO, F

CHO, AY

FOY, PW

机构：

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 15期

关键词：

D O I：

10.1049/el:19840437

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：635 / 637

页数：3

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[1] HIGH-PERFORMANCE AVALANCHE PHOTO-DIODE WITH SEPARATE ABSORPTION GRADING AND MULTIPLICATION REGIONS
CAMPBELL, JC
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[J]. ELECTRONICS LETTERS, 1983, 19 (20) : 818 - 820
[2] NEW LONG WAVELENGTH AL0.48IN0.52AS/GA0.47IN0.53AS AVALANCHE PHOTO-DIODE GROWN BY MOLECULAR-BEAM EPITAXY
CAPASSO, F
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FOY, PW
BETHEA, CG
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (11) : 1040 - 1042
[3] CAPASSO F, 1983, DEC INT EL DEV M WAS, P468
[4] LONG-WAVELENGTH (1.3- TO 1.6-MUM) DETECTORS FOR FIBER-OPTICAL COMMUNICATIONS
STILLMAN, GE
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CHIN, R
DAPKUS, PD
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) : 1355 - 1371