NEW LONG WAVELENGTH AL0.48IN0.52AS/GA0.47IN0.53AS AVALANCHE PHOTO-DIODE GROWN BY MOLECULAR-BEAM EPITAXY

被引：15

作者：

CAPASSO, F

ALAVI, K

CHO, AY

FOY, PW

BETHEA, CG

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 11期

关键词：

D O I：

10.1063/1.94228

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1040 / 1042

页数：3

共 17 条

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ELECTRONICS LETTERS, 1983, 19 (06) :227-229

[2] INGAASP-INGAAS HETEROJUNCTION P-I-N DETECTORS WITH LOW DARK CURRENT AND SMALL CAPACITANCE FOR 1.3-1.6-MU-M FIBER OPTIC SYSTEMS [J].

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[3] AN N-IN0.53GA0.47AS-N-INP RECTIFIER [J].

FORREST, SR ;

KIM, OK .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5838-5842

[4] OPTICAL-RESPONSE TIME OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES [J].

FORREST, SR ;

KIM, OK ;

SMITH, RG .

APPLIED PHYSICS LETTERS, 1982, 41 (01) :95-98

[5] PERFORMANCE OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES [J].

FORREST, SR ;

SMITH, RG ;

KIM, OK .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (12) :2040-2048

[6] TWO-DIMENSIONAL ELECTRON-GAS AT A MOLECULAR-BEAM EPITAXIAL-GROWN, SELECTIVELY DOPED, IN0.53GA0.47AS-IN0.48AL0.52AS INTERFACE [J].

KASTALSKY, A ;

DINGLE, R ;

CHENG, KY ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1982, 41 (03) :274-277

[7] A HIGH-GAIN IN0.53GA0.47AS-INP AVALANCHE PHOTO-DIODE WITH NO TUNNELING LEAKAGE CURRENT [J].

KIM, OK ;

FORREST, SR ;

BONNER, WA ;

SMITH, RG .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :402-404

[8]

Leheny R. F., 1982, GaInAsP alloy semiconductors, P275

[9]

MALIK RJ, 1983, IEEE ELECTRON DEVICE, V4

[10] HIGH-SPEED-RESPONSE INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTO-DIODE WITH INGAASP BUFFER LAYERS [J].

MATSUSHIMA, Y ;

AKIBA, S ;

SAKAI, K ;

KUSHIRO, Y ;

NODA, Y ;

UTAKA, K .

ELECTRONICS LETTERS, 1982, 18 (22) :945-946

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