A HIGH-GAIN IN0.53GA0.47AS-INP AVALANCHE PHOTO-DIODE WITH NO TUNNELING LEAKAGE CURRENT

被引：59

作者：

KIM, OK

FORREST, SR

BONNER, WA

SMITH, RG

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 05期

关键词：

D O I：

10.1063/1.92752

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：402 / 404

页数：3

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