EVIDENCE FOR TUNNELING IN REVERSE-BIASED III-V PHOTODETECTOR DIODES

被引：112

作者：

FORREST, SR

DIDOMENICO, M

SMITH, RG

STOCKER, HJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 07期

关键词：

D O I：

10.1063/1.91553

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：580 / 582

页数：3

共 11 条

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[4]

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APPLIED PHYSICS LETTERS, 1979, 35 (03) :251-253

[8] ELECTRICAL TRANSPORT IN NGE-PGAAS HETEROJUNCTIONS [J].

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[9]

SZE SM, 1969, PHYSICS SEMICONDUCTO

[10] INGAASP-INP AVALANCHE PHOTO-DIODE [J].

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