ELECTRICAL TRANSPORT IN NGE-PGAAS HETEROJUNCTIONS

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS [J]. PHYSICAL REVIEW, 1961, 121 (03): : 684 - &

[3] EFFECT OF CRYSTAL ORIENTATION ON GE-GAAS HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 612 - &

[4] FRANZ W, 1956, HDB PHYSIK, V17, P155

[5] AVALANCHE BREAKDOWN IN GALLIUM ARSENIDE PARA JUNCTIONS [J]. PHYSICAL REVIEW, 1962, 128 (06): : 2518 - &

[6] NELSON H, 1963, RCA REV, V24, P603

[7] THE USE OF CLOSE SPACING IN CHEMICAL-TRANSPORT SYSTEMS FOR GROWING EPITAXIAL LAYERS OF SEMICONDUCTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (11) : 1165 - 1167

[8] PERLMAN SS, 1962, SOLID STATE ELECTRON, V1, P911

[9] PREPARATION OF GE/SI AND GE/GAAS HETEROJUNCTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) : 245 - &

[10] RIBEN AR, IN PRESS

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS [J]. PHYSICAL REVIEW, 1961, 121 (03): : 684 - &

[3] EFFECT OF CRYSTAL ORIENTATION ON GE-GAAS HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 612 - &

[4] FRANZ W, 1956, HDB PHYSIK, V17, P155

[5] AVALANCHE BREAKDOWN IN GALLIUM ARSENIDE PARA JUNCTIONS [J]. PHYSICAL REVIEW, 1962, 128 (06): : 2518 - &

[6] NELSON H, 1963, RCA REV, V24, P603

[7] THE USE OF CLOSE SPACING IN CHEMICAL-TRANSPORT SYSTEMS FOR GROWING EPITAXIAL LAYERS OF SEMICONDUCTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (11) : 1165 - 1167

[8] PERLMAN SS, 1962, SOLID STATE ELECTRON, V1, P911

[9] PREPARATION OF GE/SI AND GE/GAAS HETEROJUNCTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) : 245 - &

[10] RIBEN AR, IN PRESS