EFFECT OF CRYSTAL ORIENTATION ON GE-GAAS HETEROJUNCTIONS

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] ANDERSON RL, 1960, IBM J RES DEVELOP, V4, P248

[3] ANDERSON RL, 1961, 1960 P INT C SEM PHY, P563

[4] GIBSON AF, 1957, PROGRESS SEMICOND ED, V2, P213

[5] GUNN JB, 1957, PROGRESS SEMICONDUCT, V2, P213

[6] HOWARD WA, TO BE PUBLISHED

[7] SWITCHING TIME IN JUNCTION DIODES AND JUNCTION TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (05): : 829 - 834

[8] TRANSIENT RESPONSE OF A P-N JUNCTION [J]. JOURNAL OF APPLIED PHYSICS, 1954, 25 (09) : 1148 - 1154

[9] TUNNEL DIODES BY VAPOR GROWTH OF GE ON GE AND ON GAAS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 280 - 282

[10] PHONON AND POLARON INTERACTION IN GERMANIUM-GALLIUM ARSENIDE TUNNEL HETEROJUNCTIONS [J]. PHYSICAL REVIEW, 1962, 128 (05): : 2149 - +

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] ANDERSON RL, 1960, IBM J RES DEVELOP, V4, P248

[3] ANDERSON RL, 1961, 1960 P INT C SEM PHY, P563

[4] GIBSON AF, 1957, PROGRESS SEMICOND ED, V2, P213

[5] GUNN JB, 1957, PROGRESS SEMICONDUCT, V2, P213

[6] HOWARD WA, TO BE PUBLISHED

[7] SWITCHING TIME IN JUNCTION DIODES AND JUNCTION TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (05): : 829 - 834

[8] TRANSIENT RESPONSE OF A P-N JUNCTION [J]. JOURNAL OF APPLIED PHYSICS, 1954, 25 (09) : 1148 - 1154

[9] TUNNEL DIODES BY VAPOR GROWTH OF GE ON GE AND ON GAAS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 280 - 282

[10] PHONON AND POLARON INTERACTION IN GERMANIUM-GALLIUM ARSENIDE TUNNEL HETEROJUNCTIONS [J]. PHYSICAL REVIEW, 1962, 128 (05): : 2149 - +