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PHONON AND POLARON INTERACTION IN GERMANIUM-GALLIUM ARSENIDE TUNNEL HETEROJUNCTIONS
被引:11
作者
:
NATHAN, MI
论文数:
0
引用数:
0
h-index:
0
NATHAN, MI
MARINACE, JC
论文数:
0
引用数:
0
h-index:
0
MARINACE, JC
机构
:
来源
:
PHYSICAL REVIEW
|
1962年
/ 128卷
/ 05期
关键词
:
D O I
:
10.1103/PhysRev.128.2149
中图分类号
:
O4 [物理学];
学科分类号
:
0702 ;
摘要
:
引用
收藏
页码:2149 / +
页数:1
相关论文
共 9 条
[1]
GERMANIUM-GALLIUM ARSENIDE HETEROJUNCTIONS
ANDERSON, RL
论文数:
0
引用数:
0
h-index:
0
ANDERSON, RL
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1960,
4
(03)
: 283
-
287
[2]
COCHRAN W, 1961, J APPL PHYS, V32, P2102, DOI 10.1063/1.1777024
[3]
A NEW DEVICE USING THE TUNNELING PROCESS IN NARROW P-N JUNCTIONS
ESAKI, L
论文数:
0
引用数:
0
h-index:
0
ESAKI, L
MIYAHARA, Y
论文数:
0
引用数:
0
h-index:
0
MIYAHARA, Y
[J].
SOLID-STATE ELECTRONICS,
1960,
1
(01)
: 13
-
&
[4]
FANG FF, TO BE PUBLISHED
[5]
DIRECT OBSERVATION OF POLARONS AND PHONONS DURING TUNNELING IN GROUP-3-5 SEMICONDUCTOR JUNCTIONS
HALL, RN
论文数:
0
引用数:
0
h-index:
0
HALL, RN
RACETTE, JH
论文数:
0
引用数:
0
h-index:
0
RACETTE, JH
EHRENREICH, H
论文数:
0
引用数:
0
h-index:
0
EHRENREICH, H
[J].
PHYSICAL REVIEW LETTERS,
1960,
4
(09)
: 456
-
458
[6]
HALL RN, 1961, 1960 P INT C SEM PRA, P196
[7]
DIRECT OBSERVATION OF PHONONS DURING TUNNELING IN NARROW JUNCTION DIODES
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
HOLONYAK, N
LESK, IA
论文数:
0
引用数:
0
h-index:
0
LESK, IA
HALL, RN
论文数:
0
引用数:
0
h-index:
0
HALL, RN
TIEMANN, JJ
论文数:
0
引用数:
0
h-index:
0
TIEMANN, JJ
EHRENREICH, H
论文数:
0
引用数:
0
h-index:
0
EHRENREICH, H
[J].
PHYSICAL REVIEW LETTERS,
1959,
3
(04)
: 167
-
168
[8]
TUNNEL DIODES BY VAPOR GROWTH OF GE ON GE AND ON GAAS
MARINACE, JC
论文数:
0
引用数:
0
h-index:
0
MARINACE, JC
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1960,
4
(03)
: 280
-
282
[9]
EPITAXIAL VAPOR GROWTH OF GE SINGLE CRYSTALS IN A CLOSED-CYCLE PROCESS
MARINACE, JC
论文数:
0
引用数:
0
h-index:
0
MARINACE, JC
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1960,
4
(03)
: 248
-
255
←
1
→
共 9 条
[1]
GERMANIUM-GALLIUM ARSENIDE HETEROJUNCTIONS
ANDERSON, RL
论文数:
0
引用数:
0
h-index:
0
ANDERSON, RL
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1960,
4
(03)
: 283
-
287
[2]
COCHRAN W, 1961, J APPL PHYS, V32, P2102, DOI 10.1063/1.1777024
[3]
A NEW DEVICE USING THE TUNNELING PROCESS IN NARROW P-N JUNCTIONS
ESAKI, L
论文数:
0
引用数:
0
h-index:
0
ESAKI, L
MIYAHARA, Y
论文数:
0
引用数:
0
h-index:
0
MIYAHARA, Y
[J].
SOLID-STATE ELECTRONICS,
1960,
1
(01)
: 13
-
&
[4]
FANG FF, TO BE PUBLISHED
[5]
DIRECT OBSERVATION OF POLARONS AND PHONONS DURING TUNNELING IN GROUP-3-5 SEMICONDUCTOR JUNCTIONS
HALL, RN
论文数:
0
引用数:
0
h-index:
0
HALL, RN
RACETTE, JH
论文数:
0
引用数:
0
h-index:
0
RACETTE, JH
EHRENREICH, H
论文数:
0
引用数:
0
h-index:
0
EHRENREICH, H
[J].
PHYSICAL REVIEW LETTERS,
1960,
4
(09)
: 456
-
458
[6]
HALL RN, 1961, 1960 P INT C SEM PRA, P196
[7]
DIRECT OBSERVATION OF PHONONS DURING TUNNELING IN NARROW JUNCTION DIODES
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
HOLONYAK, N
LESK, IA
论文数:
0
引用数:
0
h-index:
0
LESK, IA
HALL, RN
论文数:
0
引用数:
0
h-index:
0
HALL, RN
TIEMANN, JJ
论文数:
0
引用数:
0
h-index:
0
TIEMANN, JJ
EHRENREICH, H
论文数:
0
引用数:
0
h-index:
0
EHRENREICH, H
[J].
PHYSICAL REVIEW LETTERS,
1959,
3
(04)
: 167
-
168
[8]
TUNNEL DIODES BY VAPOR GROWTH OF GE ON GE AND ON GAAS
MARINACE, JC
论文数:
0
引用数:
0
h-index:
0
MARINACE, JC
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1960,
4
(03)
: 280
-
282
[9]
EPITAXIAL VAPOR GROWTH OF GE SINGLE CRYSTALS IN A CLOSED-CYCLE PROCESS
MARINACE, JC
论文数:
0
引用数:
0
h-index:
0
MARINACE, JC
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1960,
4
(03)
: 248
-
255
←
1
→