EPITAXIAL VAPOR GROWTH OF GE SINGLE CRYSTALS IN A CLOSED-CYCLE PROCESS

被引：88

作者：

MARINACE, JC

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1960年 / 4卷 / 03期

关键词：

D O I：

10.1147/rd.43.0248

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

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页码：248 / 255

页数：8

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