DISLOCATION CONTENT IN EPITAXIALLY VAPOR-GROWN GE CRYSTALS

被引：11

作者：

INGHAM, HS

MCDADE, PJ

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1960年 / 4卷 / 03期

关键词：

D O I：

10.1147/rd.43.0302

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

收藏

页码：302 / 304

页数：3

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