NEW LONG WAVELENGTH AL0.48IN0.52AS/GA0.47IN0.53AS AVALANCHE PHOTO-DIODE GROWN BY MOLECULAR-BEAM EPITAXY

被引：15

作者：

CAPASSO, F

ALAVI, K

CHO, AY

FOY, PW

BETHEA, CG

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 11期

关键词：

D O I：

10.1063/1.94228

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1040 / 1042

页数：3

相关论文

共 17 条

[11]

MATSUSHIMA Y, 1981, IEEE ELECTRON DEVICE, V2, P179

[12] INGAASP HETEROSTRUCTURE AVALANCHE PHOTO-DIODES WITH HIGH AVALANCHE GAIN [J].

NISHIDA, K ;

TAGUCHI, K ;

MATSUMOTO, Y .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :251-253

[13] COMPOSITIONAL DEPENDENCE OF BAND-GAP ENERGY AND CONDUCTION-BAND EFFECTIVE MASS OF IN1-X-YGAXALY AS LATTICE MATCHED TO INP [J].

OLEGO, D ;

CHANG, TY ;

SILBERG, E ;

CARIDI, EA ;

PINCZUK, A .

APPLIED PHYSICS LETTERS, 1982, 41 (05) :476-478

[14] MEASUREMENT OF THE CONDUCTION-BAND DISCONTINUITY OF MOLECULAR-BEAM EPITAXIAL GROWN IN0.52AL0.48AS/IN0.53GA0.47AS, N-N HETEROJUNCTION BY C-V PROFILING [J].

PEOPLE, R ;

WECHT, KW ;

ALAVI, K ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1983, 43 (01) :118-120

[15] NEW INGAAS-INP AVALANCHE PHOTO-DIODE STRUCTURE FOR THE 1-1.6 MU-M WAVELENGTH REGION [J].

SUSA, N ;

NAKAGOME, H ;

MIKAMI, O ;

ANDO, H ;

KANBE, H .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (08) :864-870

[16] 1.5-1.6-MU-M GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TEMKIN, H ;

ALAVI, K ;

WAGNER, WR ;

PEARSALL, TP ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1983, 42 (10) :845-847

[17] AL0.48IN0.52AS-GA0.47IN0.53AS-AL0.48IN0.52AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY WITH LASING WAVELENGTH AT 1.65-MU-M [J].

TSANG, WT .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :3861-3864