HIGH-SPEED-RESPONSE INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTO-DIODE WITH INGAASP BUFFER LAYERS

被引：53

作者：

MATSUSHIMA, Y

AKIBA, S

SAKAI, K

KUSHIRO, Y

NODA, Y

UTAKA, K

机构：

来源：

关键词：

D O I：

10.1049/el:19820649

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：945 / 946

页数：2

共 8 条

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[2] EXCESS-NOISE AND RECEIVER SENSITIVITY MEASUREMENTS OF IN0.53GA0.47AS-INP AVALANCHE PHOTO-DIODES
FORREST, SR
WILLIAMS, GF
KIM, OK
SMITH, RG
[J]. ELECTRONICS LETTERS, 1981, 17 (24) : 917 - 919
[3] OPTICAL-RESPONSE TIME OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES
FORREST, SR
KIM, OK
SMITH, RG
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (01) : 95 - 98
[4] A HIGH-GAIN IN0.53GA0.47AS-INP AVALANCHE PHOTO-DIODE WITH NO TUNNELING LEAKAGE CURRENT
KIM, OK
FORREST, SR
BONNER, WA
SMITH, RG
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (05) : 402 - 404
[5] Matsushima Y., 1980, Sixth European Conference on Optical Communication, P226
[6] MATSUSHIMA Y, 1981, IEEE ELECTRON DEVICE, V2, P179
[7] NEW INGAAS-INP AVALANCHE PHOTO-DIODE STRUCTURE FOR THE 1-1.6 MU-M WAVELENGTH REGION
SUSA, N
NAKAGOME, H
MIKAMI, O
ANDO, H
KANBE, H
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (08) : 864 - 870
[8] Yeats R., 1981, IEEE Electron Device Letters, VEDL-2, P268, DOI 10.1109/EDL.1981.25428