PERFORMANCE OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES

被引：56

作者：

FORREST, SR

SMITH, RG

KIM, OK

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1982年 / 18卷 / 12期

关键词：

D O I：

10.1109/JQE.1982.1071478

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2040 / 2048

页数：9

共 29 条

[1] TUNNELING CURRENT IN INGAAS AND OPTIMUM DESIGN FOR INGAAS-INP AVALANCHE PHOTO-DIODE [J].

ANDO, H ;

KANBE, H ;

ITO, M ;

KANEDA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) :L277-L280

[2] INGAAS-INP SEPARATED ABSORPTION AND MULTIPLICATION REGIONS AVALANCHE PHOTO-DIODE USING LIQUID-PHASE AND VAPOR-PHASE EPITAXIES [J].

ANDO, H ;

YAMAUCHI, Y ;

NAKAGOME, H ;

SUSA, N ;

KANBE, H .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :250-254

[3] IONIZATION COEFFICIENTS OF ELECTRONS AND HOLES IN INP [J].

ARMIENTO, CA ;

GROVES, SH ;

HURWITZ, CE .

APPLIED PHYSICS LETTERS, 1979, 35 (04) :333-335

[4]

BONNER WA, 1982, IEEE J QUANTUM ELECT, V18, P2040

[5]

CHEN YS, 1980, COMMUNICATION

[6] INTERFACE GRADING IN INGAASP LIQUID-PHASE EPITAXIAL HETEROSTRUCTURES [J].

COOK, LW ;

FENG, M ;

TASHIMA, MM ;

BLATTNER, RJ ;

STILLMAN, GE .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :173-175

[7]

COOK LW, 1981, I PHYS C SER, V56, P361

[8] AVALANCHE MULTIPLICATION AND NOISE CHARACTERISTICS OF LOW-DARK-CURRENT GAINASP-INP AVALANCHE PHOTODETECTORS [J].

DIADIUK, V ;

GROVES, SH ;

HURWITZ, CE .

APPLIED PHYSICS LETTERS, 1980, 37 (09) :807-810

[9] AN N-IN0.53GA0.47AS-N-INP RECTIFIER [J].

FORREST, SR ;

KIM, OK .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5838-5842

[10] EXCESS-NOISE AND RECEIVER SENSITIVITY MEASUREMENTS OF IN0.53GA0.47AS-INP AVALANCHE PHOTO-DIODES [J].

FORREST, SR ;

WILLIAMS, GF ;

KIM, OK ;

SMITH, RG .

ELECTRONICS LETTERS, 1981, 17 (24) :917-919

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