INGAAS-INP SEPARATED ABSORPTION AND MULTIPLICATION REGIONS AVALANCHE PHOTO-DIODE USING LIQUID-PHASE AND VAPOR-PHASE EPITAXIES

被引：32

作者：

ANDO, H

YAMAUCHI, Y

NAKAGOME, H

SUSA, N

KANBE, H

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 02期

关键词：

D O I：

10.1109/JQE.1981.1071070

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：250 / 254

页数：5

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