BE-IMPLANTED 1.3-MUM INGAASP AVALANCHE PHOTODETECTORS

被引：34

作者：

FENG, M ^{[1
]}

OBERSTAR, JD ^{[1
]}

WINDHORN, TH ^{[1
]}

COOK, LW ^{[1
]}

STILLMAN, GE ^{[1
]}

STREETMAN, BG ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 09期

关键词：

D O I：

10.1063/1.90885

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of different annealing temperatures in the 450-800°C range on the photoluminescence of Be-implanted InGaAsP has been studied. The results of these measurements indicate that the annealing temperature should be above 700°C for optimum lattice recovery. Avalanche photodetectors with leakage currents as low as 1 μA at 100 V and with gains ≳100 at 116 V have been fabricated. The quantum efficiency for these devices is about 65% throughout the 1.00-1.30-μm wavelength range.

引用

页码：591 / 593

页数：3

共 29 条

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