TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE FROM BE-IMPLANTED GAAS

被引：18

作者：

CHATTERJEE, PK

MCLEVIGE, WV

VAIDYANATHAN, KV

STREETMAN, BG

机构：

[1] UNIV ILLINOIS,COORDIN SCI LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 09期

关键词：

D O I：

10.1063/1.88836

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：509 / 512

页数：4

共 21 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS
ASHEN, DJ
DEAN, PJ
HURLE, DTJ
MULLIN, JB
WHITE, AM
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) : 1041 - 1053
[2] BOUND-EXCITON FREE-EXCITON BAND-ACCEPTOR DONOR-ACCEPTOR AND AUGER RECOMBINATION IN GAAS
BOGARDUS, EH
BEBB, HB
[J]. PHYSICAL REVIEW, 1968, 176 (03): : 993 - &
[3] PHOTOLUMINESCENCE FROM BE-IMPLANTED GAAS
CHATTERJEE, PK
VAIDYANATHAN, KV
MCLEVIGE, WV
STREETMAN, BG
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (10) : 567 - 569
[4] RADIATIVE LIFETIMES IN N-TYPE GALLIUM ARSENIDE
DINGLE, R
RODGERS, KF
[J]. APPLIED PHYSICS LETTERS, 1969, 14 (06) : 183 - &
[5] RADIATIVE LIFETIMES OF DONOR-ACCEPTOR PAIRS IN P-TYPE GALLIUM ARSENIDE
DINGLE, R
[J]. PHYSICAL REVIEW, 1969, 184 (03): : 788 - &
[6] OPTICAL TRANSITIONS INVOLVING IMPURITIES IN SEMICONDUCTORS
DUMKE, WP
[J]. PHYSICAL REVIEW, 1963, 132 (05): : 1998 - &
[7] OPTICAL ABSORPTION AND RECOMBINATION RADIATION IN SEMICONDUCTORS DUE TO TRANSITIONS BETWEEN HYDROGEN-LIKE ACCEPTOR IMPURITY LEVELS AND THE CONDUCTION BAND
EAGLES, DM
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) : 76 - 83
[8] FREE-CARRIER AND EXCITON RECOMBINATION RADIATION IN GAAS
GILLEO, MA
BAILEY, PT
HILL, DE
[J]. PHYSICAL REVIEW, 1968, 174 (03): : 898 - &
[9] EXCITON RECOMBINATION RADIATION OF GAAS-ZN
HILL, DE
[J]. PHYSICAL REVIEW B, 1970, 1 (04): : 1863 - &
[10] WINDOW-HEAT SINK SANDWICH FOR OPTICAL EXPERIMENTS - DIAMOND (OR SAPPHIRE)-SEMICONDUCTOR-INDIUM SANDWICH
HOLONYAK, N
SCIFRES, DR
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1971, 42 (12) : 1885 - &

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