ALGAASSB AVALANCHE PHOTO-DIODES FOR 1.0-1.3-MU-M WAVELENGTH REGION

被引:16
作者
KAGAWA, T
MOTOSUGI, G
机构
[1] Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
关键词
D O I
10.1143/JJAP.18.2317
中图分类号
O59 [应用物理学];
学科分类号
摘要
[No abstract available]
引用
收藏
页码:2317 / 2318
页数:2
相关论文
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[3]  
LAW HD, 1978, APPL PHYS LETT, V33, P948, DOI 10.1063/1.90229
[4]   INGAASP HETEROSTRUCTURE AVALANCHE PHOTO-DIODES WITH HIGH AVALANCHE GAIN [J].
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APPLIED PHYSICS LETTERS, 1979, 35 (03) :251-253
[5]   INGAASP-INP AVALANCHE PHOTO-DIODE [J].
TAKANASHI, Y ;
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