ALGAASSB PHOTO-DIODES LATTICE-MATCHED TO GASB

被引:15
作者
KAGAWA, T
MOTOSUGI, G
机构
[1] Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
关键词
D O I
10.1143/JJAP.18.1001
中图分类号
O59 [应用物理学];
学科分类号
摘要
[No abstract available]
引用
收藏
页码:1001 / 1002
页数:2
相关论文
共 4 条
[1]  
ANDERSON SJ, 1977, 6TH P INT S GALL ARS
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LAW, HD ;
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APPLIED PHYSICS LETTERS, 1978, 33 (05) :416-417
[3]   DEPENDENCE OF SURFACE FLATNESS ON LPE CONDITION OF ALGASB [J].
MOTOSUGI, G ;
KAGAWA, T .
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[4]   HIGHLY EFFICIENT PGASB-NGA1-XALXSB PHOTO-DIODES [J].
SUKEGAWA, T ;
HIRAGUCHI, T ;
TANAKA, A ;
HAGINO, M .
APPLIED PHYSICS LETTERS, 1978, 32 (06) :376-378