HIGHLY EFFICIENT PGASB-NGA1-XALXSB PHOTO-DIODES

被引：17

作者：

SUKEGAWA, T

HIRAGUCHI, T

TANAKA, A

HAGINO, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 06期

关键词：

D O I：

10.1063/1.90052

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：376 / 378

页数：3

共 15 条

[1] REFLECTIVITY OF TERNARY COMPOUND GA(1-X)AL(X)SB BETWEEN 2 AND 5.5 EV [J].

ANCE, C ;

NGUYENVANMAU, A ;

BOUGNOT, G .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (12) :1979-1984

[2] OPTICAL-ABSORPTION OF COMPOSITE MIXTURE GA1XALXSB NEAR BORDER OF ABSORPTION [J].

ANCE, C ;

ROBIN, J ;

VANMAU, AN ;

BOUGNOT, G .

SOLID STATE COMMUNICATIONS, 1974, 15 (08) :1295-1298

[3] E(O) DIELECTRIC-CONSTANT OF GA(1-X)ALXSB [J].

ANCE, C ;

VANMAU, AN .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (08) :1565-1570

[4] COMPOSITION DEPENDENCE OF FUNDAMENTAL EDGE IN GA1-XALXSB ALLOYS [J].

AUVERGNE, D ;

MERLE, P ;

ZEINELDIN, A ;

MATHIEU, H ;

NGUYENVANMAU, A .

SOLID STATE COMMUNICATIONS, 1975, 17 (04) :511-514

[5] ENERGY BAND STRUCTURE OF GALLIUM ANTIMONIDE [J].

BECKER, WM ;

FAN, HY ;

RAMDAS, AK .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2094-&

[6] GROWTH AND CHARACTERIZATION OF ALXGA1-XSB [J].

BEDAIR, SM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) :1150-1152

[7]

BIRYULIN YF, 1976, SOV PHYS SEMICOND, V9, P1427

[8] AL-GA-SB TERNARY PHASE-DIAGRAM AND ITS APPLICATION TO LIQUID-PHASE EPITAXIAL-GROWTH [J].

CHENG, KY ;

PEARSON, GL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (05) :753-757

[9]

DEDEGKAEV TT, 1977, SOV PHYS SEMICOND+, V11, P155

[10] SPECTRAL LOSSES OF LOW-OH-CONTENT OPTICAL FIBERS [J].

HORIGUCHI, M ;

OSANAI, H .

ELECTRONICS LETTERS, 1976, 12 (12) :310-312

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