AL-GA-SB TERNARY PHASE-DIAGRAM AND ITS APPLICATION TO LIQUID-PHASE EPITAXIAL-GROWTH

被引：50

作者：

CHENG, KY ^{[1
]}

PEARSON, GL ^{[1
]}

机构：

[1] STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305

来源：

关键词：

D O I：

10.1149/1.2133400

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：753 / 757

页数：5

共 25 条

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[2] BORSCHEVSKII AS, 1959, RUSS J INORG CHEM, V4, P1306
[3] BURDIIAN II, 1958, SOV PHYS-TECH PHYS, V3, P2451
[4] COLBY JW, 1968, ADV XRAY ANALYSIS, V11, P286
[5] CROSSLEY I, 1972, J CRYST GROWTH, V15, P268, DOI 10.1016/0022-0248(72)90021-8
[6] COMPUTER SIMULATIONS OF LIQUID PHASE EPITAXY OF GAAS IN GA SOLUTION
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SMALL, MB
[J]. JOURNAL OF CRYSTAL GROWTH, 1971, 11 (02) : 157 - &
[7] GIESECKE VG, 1958, ACTA CRYSTALLOGR, V11, P369
[8] Harris James, COMMUNICATION
[9] VARIATION OF SOLID COMPOSITION AND THICKNESS DURING LPE GROWTH OF ALXGA1-XAS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (07) : 1109 - 1111
[10] PHASE-DIAGRAM OF SYSTEM AL-GA-P
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