CURRENT TRANSPORT IN GAAS SCHOTTKY-BARRIER DIODES SUBJECT TO HIGH NEUTRON FLUENCE

被引：13

作者：

ASHOK, S ^{[1
]}

BORREGO, JM ^{[1
]}

GUTMANN, RJ ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.327715

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1076 / 1084

页数：9

共 20 条

[1] GALLIUM ARSENIDE AS A SEMI-INSULATOR [J].

ALLEN, JW .

NATURE, 1960, 187 (4735) :403-405

[2]

ALLEN JW, 1961, NATURE, V169, P296

[3] NEUTRON DISPLACEMENT EFFECTS IN EPITAXIAL GUNN DIODES [J].

BERG, N ;

DROPKIN, H .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1970, NS17 (06) :233-&

[4] INTERFACE STATE DENSITY IN AU-NGAAS SCHOTTKY DIODES [J].

BORREGO, JM ;

GUTMANN, RJ ;

ASHOK, S .

SOLID-STATE ELECTRONICS, 1977, 20 (02) :125-132

[5] NEUTRON RADIATION EFFECTS IN GOLD AND ALUMINUM GAAS SCHOTTKY DIODES [J].

BORREGO, JM ;

GUTMANN, RJ ;

ASHOK, S .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1671-1678

[6]

BUGET V, 1967, SOLID STATE ELECTRON, V10, P199

[7] PROPERTIES OF GALLIUM ARSENIDE DOUBLE-INJECTION DEVICES [J].

FERRO, AP ;

GHANDHI, SK .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (10) :4015-&

[8]

LAMB DR, 1969, ELECTRICAL CONDUCTIO, P46

[9]

LAMPERT MA, 1970, CURRENT INJECTION SO, pCH2

[10] ELECTRICAL AND OPTICAL PROPERTIES OF VITREOUS SELENIUM [J].

LANYON, HPD .

PHYSICAL REVIEW, 1963, 130 (01) :134-&

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