INTERFACE STATE DENSITY IN AU-NGAAS SCHOTTKY DIODES

被引：37

作者：

BORREGO, JM ^{[1
]}

GUTMANN, RJ ^{[1
]}

ASHOK, S ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 02期

关键词：

D O I：

10.1016/0038-1101(77)90061-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：125 / 132

页数：8

相关论文

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