TYPE CONVERSION AND P-N JUNCTION FORMATION IN LITHIUM-ION-IMPLANTED ZNSE

被引：42

作者：

PARK, YS

CHUNG, CH

机构：

来源：

关键词：

D O I：

10.1063/1.1653580

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：99 / &

共 11 条

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ANDERSON, WW
MITCHELL, JT
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[3] HIGH CONDUCTIVITY P-TYPE CDS
CHERNOW, F
ELDRIDGE, G
RUSE, G
WAHLIN, L
[J]. APPLIED PHYSICS LETTERS, 1968, 12 (10) : 339 - &
[4] PAIR SPECTRA AND EDGE EMISSION IN ZINC SELENIDE
DEAN, PJ
MERZ, JL
[J]. PHYSICAL REVIEW, 1969, 178 (03): : 1310 - &
[5] TYPE CONVERSION AND P-N JUNCTIONS IN N-CDTE PRODUCED BY ION IMPLANTATION
DONNELLY, JP
FOYT, AG
HINKLEY, ED
LINDLEY, WT
DIMMOCK, JO
[J]. APPLIED PHYSICS LETTERS, 1968, 12 (09) : 303 - &
[6] HAYES W, 1965, PHYS REV, V138, P1227
[7] PHOTOELECTRONIC PROPERTIES OF ION-IMPLANTED CDS
HOU, SL
MARLEY, JA
[J]. APPLIED PHYSICS LETTERS, 1970, 16 (11) : 467 - &
[8] TYPE CONVERSION AND P-N JUNCTION FORMATION IN ION-IMPLANTED ZNTE
HOU, SL
BECK, K
MARLEY, JA
[J]. APPLIED PHYSICS LETTERS, 1969, 14 (05) : 151 - &
[9] IBUKI S, 1967, 2 6 SEMICONDUCTOR CO, P1140
[10] LEE CC, 1967, NEW PHYS, V7, P7