PHOTOELECTRONIC PROPERTIES OF ION-IMPLANTED CDS

[1] PHOSPHOROUS-ION-IMPLANTED CDS [J]. APPLIED PHYSICS LETTERS, 1968, 12 (10) : 334 - &

[2] AVEN M, 1967, 2 6 SEMICONDUCTING C, P1250

[3] BJORKQVIST K, 1968, APPL PHYS LETT, V13, P379, DOI 10.1063/1.1652479

[4] BUBE RH, 1959, RCA REV, V20, P564

[5] HIGH CONDUCTIVITY P-TYPE CDS [J]. APPLIED PHYSICS LETTERS, 1968, 12 (10) : 339 - &

[6] TYPE CONVERSION AND P-N JUNCTION FORMATION IN ION-IMPLANTED ZNTE [J]. APPLIED PHYSICS LETTERS, 1969, 14 (05) : 151 - &

[7] ELECTRICAL PROPERTIES OF ZINC AND CADMIUM ION IMPLANTED LAYERS IN GALLIUM ARSENIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (04) : 488 - &

[8] PRESENCE OF DEEP LEVELS IN ION IMPLANTED JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1968, 13 (09) : 295 - +

[9] Lindhard J., 1963, KGL DANSKE VIDENSKAB, V33

[10] ELECTRICAL BEHAVIOR OF IMPLANTED BISMUTH IN SILICON [J]. APPLIED PHYSICS LETTERS, 1968, 13 (06) : 199 - &

[1] PHOSPHOROUS-ION-IMPLANTED CDS [J]. APPLIED PHYSICS LETTERS, 1968, 12 (10) : 334 - &

[2] AVEN M, 1967, 2 6 SEMICONDUCTING C, P1250

[3] BJORKQVIST K, 1968, APPL PHYS LETT, V13, P379, DOI 10.1063/1.1652479

[4] BUBE RH, 1959, RCA REV, V20, P564

[5] HIGH CONDUCTIVITY P-TYPE CDS [J]. APPLIED PHYSICS LETTERS, 1968, 12 (10) : 339 - &

[6] TYPE CONVERSION AND P-N JUNCTION FORMATION IN ION-IMPLANTED ZNTE [J]. APPLIED PHYSICS LETTERS, 1969, 14 (05) : 151 - &

[7] ELECTRICAL PROPERTIES OF ZINC AND CADMIUM ION IMPLANTED LAYERS IN GALLIUM ARSENIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (04) : 488 - &

[8] PRESENCE OF DEEP LEVELS IN ION IMPLANTED JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1968, 13 (09) : 295 - +

[9] Lindhard J., 1963, KGL DANSKE VIDENSKAB, V33

[10] ELECTRICAL BEHAVIOR OF IMPLANTED BISMUTH IN SILICON [J]. APPLIED PHYSICS LETTERS, 1968, 13 (06) : 199 - &