ELECTRICAL BEHAVIOR OF IMPLANTED BISMUTH IN SILICON

被引：12

作者：

MARSH, OJ

BARON, R

SHIFRIN, GA

MAYER, JW

机构：

来源：

关键词：

D O I：

10.1063/1.1652569

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：199 / &

共 10 条

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[3] DAVIES JG, IN PRESS
[4] ERIKSSON L, IN PRESS
[5] ELECTRICAL AND PHYSICAL MEASUREMENTS ON SILICON IMPLANTED WITH CHANNELED AND NONCHANNELED DOPANT IONS
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OLSEN, JS
[J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 675 - +
[6] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON
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[J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +
[7] SOLUBILITY EFFECTS OF IMPLANTED IONS IN SEMICONDUCTORS
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[J]. APPLIED PHYSICS LETTERS, 1967, 11 (03) : 92 - &
[8] ION IMPLANTATION OF SILICON .2. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTS
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BARON, R
[J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4073 - &
[9] SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON
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[J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01): : 205 - 233
[10] VASILEV VK, 1968, FIZ TVERD TELA+, V9, P1503