SELF-ALIGNED STRUCTURE INGAASP-INP DH LASERS

被引:51
作者
NISHI, H
YANO, M
NISHITANI, Y
AKITA, Y
TAKUSAGAWA, M
机构
[1] Fujitsu Laboratories, Ltd., Nakaharaku, Kawasi 211
关键词
D O I
10.1063/1.91081
中图分类号
O59 [应用物理学];
学科分类号
摘要
Self-aligned structure InGaAsP/InP DH lasers with emission wavelengths near 1.3 μm are studied. A cw threshold of about 100 mA is obtained in these lasers with cavity lengths of about 300 μm at a heat sink temperature of 25°C. Light output increases linearly with current for outputs of 10 mW per facet and no kinks appear. Fundamental-transverse and single-longitudinal mode oscillation, and stable operation of fundamental-transverse mode against injection current, are achieved. A cw operation up to 72°C is obtained with a laser.
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页码:232 / 234
页数:3
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