ETCHING AND OPTICAL CHARACTERISTICS IN GAAS/GAALAS SURFACE EMITTING LASER FABRICATION USING A NOVEL SPRAY ETCH

被引：9

作者：

TANOBE, H

KOYAMA, F

IGA, K

机构：

[1] Precision and Intelligence Laboratory, Tokyo Institute of Technology, Midori-ku, Yokohama, 227

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 5B期

关键词：

GALLIUM ARSENIDE; SURFACE EMITTING LASERS; SPRAY ETCH; PREFERENTIAL ETCH;

D O I：

10.1143/JJAP.31.1597

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present some results on a novel spray wet etch technique and surface characterization in forming short cavity structures for GaAs/GaAlAs vertical cavity surface emitting lasers. A completely flat epitaxial surface was obtained for the output-side mirror by selectively removing the GaAs substrate. The surface reflectivity was uniform and the reproducibility was drastically improved.

引用

页码：1597 / 1601

页数：5

共 7 条

[1]

CANNON JJ, 1974, J ELECTROCHEM SOC, V9, P1215

[2] GAINASP-INP SURFACE-EMITTING LASER DIODE [J].