GAINASP-INP SURFACE-EMITTING LASER DIODE

被引：19

作者：

IGA, K

UCHIYAMA, S

机构：

来源：

OPTICAL AND QUANTUM ELECTRONICS | 1986年 / 18卷 / 06期

关键词：

D O I：

10.1007/BF02041165

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：403 / 422

页数：20

共 31 条

[1] THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION [J].

ADAMS, AR ;

ASADA, M ;

SUEMATSU, Y ;

ARAI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L621-L624

[2] NEW 1-6-MU-M WAVELENGTH GAINASP-INP BURIED HETEROSTRUCTURE LASERS [J].

ARAI, S ;

ASADA, M ;

SUEMATSU, Y ;

ITAYA, Y ;

TANBUNEK, T ;

KISHINO, K .

ELECTRONICS LETTERS, 1980, 16 (10) :349-350

[3] GAINASP-INP SURFACE EMITTING LASER (LAMBDA = 1.4 MU-M, 77-K) WITH HETEROMULTILAYER BRAGG REFLECTOR [J].

CHAILERTVANITKUL, A ;

IGA, K ;

MORIKI, K .

ELECTRONICS LETTERS, 1985, 21 (07) :303-304

[4] TRIAL FABRICATION OF GAALAS/GAAS SURFACE-EMITTING INJECTION-LASER [J].

IBARAKI, A ;

ISHIKAWA, S ;

OHKOUCHI, S ;

IGA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (06) :781-782

[5]

IBARAKI A, 1984, ELECTRON LETT, V20, P781

[6] LASING CHARACTERISTICS OF IMPROVED GAINASP-INP SURFACE EMITTING INJECTION-LASERS [J].

IGA, K ;

SODA, H ;

TERAKADO, T ;

SHIMIZU, S .

ELECTRONICS LETTERS, 1983, 19 (13) :457-458

[7] ROOM-TEMPERATURE PULSED OSCILLATION OF GAALAS/GAAS SURFACE EMITTING JUNCTION LASER [J].

IGA, K ;

ISHIKAWA, S ;

OHKOUCHI, S ;

NISHIMURA, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (06) :663-668

[8] ROOM-TEMPERATURE PULSED OSCILLATION OF GAALAS GAAS SURFACE EMITTING INJECTION-LASER [J].

IGA, K ;

ISHIKAWA, S ;

OHKOUCHI, S ;

NISHIMURA, T .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :348-350

[9]

Iga K., 1985, Transactions of the Institute of Electronics and Communication Engineers of Japan, Section E (English), VE68, P91

[10] CHEMICAL ETCHING OF INP AND GAINASP FOR FABRICATING LASER-DIODES AND INTEGRATED OPTICAL CIRCUITS [J].

KAMBAYASH, T ;

KITAHARA, C ;

IGA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) :79-85

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