LASING CHARACTERISTICS OF IMPROVED GAINASP-INP SURFACE EMITTING INJECTION-LASERS

被引：28

作者：

IGA, K

SODA, H

TERAKADO, T

SHIMIZU, S

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 13期

关键词：

D O I：

10.1049/el:19830311

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：457 / 458

页数：2

相关论文

共 5 条

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IGA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) : 79 - 85
[2] LONGITUDINAL INJECTION-PLASMA LASER OF INSB (10 DEGREES K - O-21KG LONGITUDINAL TO CURRENT - E)
MELNGAILIS, I
[J]. APPLIED PHYSICS LETTERS, 1965, 6 (03) : 59 - +
[3] SURFACE-EMITTING GAINASP INP INJECTION-LASER WITH SHORT CAVITY LENGTH
MOTEGI, Y
SODA, H
IGA, K
[J]. ELECTRONICS LETTERS, 1982, 18 (11) : 461 - 463
[4] GAINASP-INP SURFACE EMITTING INJECTION-LASER WITH BURIED HETEROSTRUCTURES
OKUDA, H
SODA, H
MORIKI, K
MOTEGI, Y
IGA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) : L563 - L566
[5] SODA H, 1979, JPN J APPL PHYS, V18, P59