GAINASP-INP SURFACE EMITTING LASER (LAMBDA = 1.4 MU-M, 77-K) WITH HETEROMULTILAYER BRAGG REFLECTOR

被引:24
作者
CHAILERTVANITKUL, A
IGA, K
MORIKI, K
机构
[1] Tokyo Inst of Technology, Yokohama, Jpn, Tokyo Inst of Technology, Yokohama, Jpn
关键词
D O I
10.1049/el:19850216
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
5
引用
收藏
页码:303 / 304
页数:2
相关论文
共 5 条
[1]  
CHAILERTVANITKU.A, 1983, 15TH C SOL STAT DEV, P305
[2]   SURFACE-EMITTING GAINASP INP INJECTION-LASER WITH SHORT CAVITY LENGTH [J].
MOTEGI, Y ;
SODA, H ;
IGA, K .
ELECTRONICS LETTERS, 1982, 18 (11) :461-463
[3]   GAINASP-INP SURFACE EMITTING INJECTION-LASER WITH BURIED HETEROSTRUCTURES [J].
OKUDA, H ;
SODA, H ;
MORIKI, K ;
MOTEGI, Y ;
IGA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) :L563-L566
[4]  
SODA H, 1979, JPN J APPL PHYS, V18, P59
[5]   GAINASP INP SURFACE EMITTING INJECTION-LASER WITH A RING ELECTRODE [J].
UCHIYAMA, S ;
IGA, K .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (10) :1117-1118