FET CHARACTERISTICS OF SUBSTITUTED OLIGOTHIOPHENES WITH A SERIES OF POLYMERIZATION DEGREES

被引：42

作者：

WARAGAI, K ^{[1
]}

AKIMICHI, H ^{[1
]}

HOTTA, S ^{[1
]}

KANO, H ^{[1
]}

SAKAKI, H ^{[1
]}

机构：

[1] UNIV TOKYO,ADV SCI & TECHNOL RES CTR,MEGURO KU,TOKYO 153,JAPAN

来源：

SYNTHETIC METALS | 1993年 / 57卷 / 01期

关键词：

OLIGOTHIOPHENE; MOBILITY; FET; CHARGE TRANSPORT; POLARON; HOPPING;

D O I：

10.1016/0379-6779(93)90556-C

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

FET measurements have been carried out at various temperatures and electric fields using substituted oligothiophenes. The highest mobility achieved was about 10(-2) cm2/Vs for dimethylsexithlophene. The charge transport in the FET configurations can be interpreted in terms of hopping of polarons.

引用

页码：4053 / 4058

页数：6

共 20 条

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