SMOOTHING OF CHEMICALLY VAPOR-DEPOSITED DIAMOND FILMS BY ION-BEAM IRRADIATION

被引:76
作者
HIRATA, A
TOKURA, H
YOSHIKAWA, M
机构
[1] Department of Mechanical Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152, 2-12-1, O-okayama
关键词
D O I
10.1016/0040-6090(92)90498-Z
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, smoothing of chemically vapour deposited diamond films by ion beam irradiation is described. Diamond films were synthesized by arc discharge plasma jet chemical vapour deposition (CVD) and microwave plasma CVD. Argon and oxygen gases are used as an ionized gas. As a result, by setting the incident angle at 0-degrees and 80-degrees , smooth surfaces of microwave plasma CVD diamond films were obtained. The peak-to-valley (p-v) surface roughness is reduced from 3-mu-m to 0.5-mu-m at 80-degrees. In addition, we discuss the smoothing mechanism of diamond films and describe it using a simple model.
引用
收藏
页码:43 / 48
页数:6
相关论文
共 3 条
[1]  
Tezuka S., 1990, Journal of the Japan Society of Precision Engineering, V56, P2255, DOI 10.2493/jjspe.56.2255
[2]   ETCHING OF DIAMOND WITH ARGON AND OXYGEN ION-BEAMS [J].
WHETTEN, TJ ;
ARMSTEAD, AA ;
GRZYBOWSKI, TA ;
RUOFF, AL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :477-480
[3]  
Yang C, 1989, J JPN SOC PRECISION, V55, P77