FIELD ENHANCED CARRIER GENERATION IN MOS-CAPACITORS CONTAINING DEFECTS

被引：18

作者：

WERNER, C

EDER, A

BERNT, H

机构：

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 03期

关键词：

D O I：

10.1016/0038-1101(81)90091-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：275 / 279

页数：5

共 10 条

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[8] ON SEPARATION OF BULK AND SURFACE COMPONENTS OF LIFETIME USING PULSED MOS CAPACITOR [J].

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[9] DEFECT-CONTROLLED GENERATION IN DEEPLY DEPLETED MOS-C STRUCTURES [J].

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