DEFECT-CONTROLLED GENERATION IN DEEPLY DEPLETED MOS-C STRUCTURES

被引：23

作者：

SMALL, DW ^{[1
]}

PIERRET, RF ^{[1
]}

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

来源：

APPLIED PHYSICS LETTERS | 1975年 / 27卷 / 03期

关键词：

D O I：

10.1063/1.88388

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：148 / 150

页数：3

共 11 条

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[9]

SMALL DW, 1975, THESIS PURDUE U

[10] OXIDATION-INDUCED STACKING-FAULTS IN SILICON .2. ELECTRICAL EFFECTS IN PN DIODES [J].

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