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INTERPRETATION OF SURFACE AND BULK EFFECTS USING PULSED MIS CAPACITOR
被引:160
作者
:
SCHRODER, DK
论文数:
0
引用数:
0
h-index:
0
SCHRODER, DK
GULDBERG, J
论文数:
0
引用数:
0
h-index:
0
GULDBERG, J
机构
:
来源
:
SOLID-STATE ELECTRONICS
|
1971年
/ 14卷
/ 12期
关键词
:
D O I
:
10.1016/0038-1101(71)90118-3
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1285 / +
页数:1
相关论文
共 34 条
[1]
SI-SIO2 FAST INTERFACE STATE MEASUREMENTS
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(07)
: 760
-
+
[2]
CASTAGNE R, 1968, CR ACAD SCI B PHYS, V267, P866
[3]
LOW-TEMPERATURE REDUCTION OF FAST SURFACE STATES ASSOCIATED WITH THERMALLY OXIDIZED SILICON
CASTRO, PL
论文数:
0
引用数:
0
h-index:
0
CASTRO, PL
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(02)
: 280
-
+
[4]
CHOO SC, TO BE PUBLISHED
[5]
MINORITY CARRIER LIFETIME MEASUREMENT IN GOLD DOPED SILICON MOS STRUCTURES
CLEMENT, G
论文数:
0
引用数:
0
h-index:
0
CLEMENT, G
VOOS, M
论文数:
0
引用数:
0
h-index:
0
VOOS, M
[J].
SURFACE SCIENCE,
1968,
11
(01)
: 147
-
&
[6]
CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
DEAL, BE
MACKENNA, EL
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
MACKENNA, EL
CASTRO, PL
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
CASTRO, PL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(07)
: 997
-
&
[7]
M.I.S. CAPACITANCE IN HEAVY INVERSION
ESTEVE, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire d'Automatique et de ses Applications Spatials du CNRS, 31 Toulouse
ESTEVE, DJ
SIMONNE, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire d'Automatique et de ses Applications Spatials du CNRS, 31 Toulouse
SIMONNE, JJ
[J].
ELECTRONICS LETTERS,
1969,
5
(09)
: 194
-
+
[8]
SURFACE RECOMBINATION IN SEMICONDUCTORS
FITZGERALD, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, CA
FITZGERALD, DJ
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, CA
GROVE, AS
[J].
SURFACE SCIENCE,
1968,
9
(02)
: 347
-
+
[9]
LOW-TEMPERATURE HYSTERESIS EFFECTS IN METAL-OXIDE-SILICON CAPACITORS CAUSED BY SURFACE-STATE TRAPPING
GOETZBERGER, A
论文数:
0
引用数:
0
h-index:
0
GOETZBERGER, A
IRVIN, JC
论文数:
0
引用数:
0
h-index:
0
IRVIN, JC
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1968,
ED15
(12)
: 1009
-
+
[10]
DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
[J].
APPLIED PHYSICS LETTERS,
1966,
8
(02)
: 31
-
&
←
1
2
3
4
→
共 34 条
[1]
SI-SIO2 FAST INTERFACE STATE MEASUREMENTS
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(07)
: 760
-
+
[2]
CASTAGNE R, 1968, CR ACAD SCI B PHYS, V267, P866
[3]
LOW-TEMPERATURE REDUCTION OF FAST SURFACE STATES ASSOCIATED WITH THERMALLY OXIDIZED SILICON
CASTRO, PL
论文数:
0
引用数:
0
h-index:
0
CASTRO, PL
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(02)
: 280
-
+
[4]
CHOO SC, TO BE PUBLISHED
[5]
MINORITY CARRIER LIFETIME MEASUREMENT IN GOLD DOPED SILICON MOS STRUCTURES
CLEMENT, G
论文数:
0
引用数:
0
h-index:
0
CLEMENT, G
VOOS, M
论文数:
0
引用数:
0
h-index:
0
VOOS, M
[J].
SURFACE SCIENCE,
1968,
11
(01)
: 147
-
&
[6]
CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
DEAL, BE
MACKENNA, EL
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
MACKENNA, EL
CASTRO, PL
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
CASTRO, PL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(07)
: 997
-
&
[7]
M.I.S. CAPACITANCE IN HEAVY INVERSION
ESTEVE, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire d'Automatique et de ses Applications Spatials du CNRS, 31 Toulouse
ESTEVE, DJ
SIMONNE, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire d'Automatique et de ses Applications Spatials du CNRS, 31 Toulouse
SIMONNE, JJ
[J].
ELECTRONICS LETTERS,
1969,
5
(09)
: 194
-
+
[8]
SURFACE RECOMBINATION IN SEMICONDUCTORS
FITZGERALD, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, CA
FITZGERALD, DJ
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, CA
GROVE, AS
[J].
SURFACE SCIENCE,
1968,
9
(02)
: 347
-
+
[9]
LOW-TEMPERATURE HYSTERESIS EFFECTS IN METAL-OXIDE-SILICON CAPACITORS CAUSED BY SURFACE-STATE TRAPPING
GOETZBERGER, A
论文数:
0
引用数:
0
h-index:
0
GOETZBERGER, A
IRVIN, JC
论文数:
0
引用数:
0
h-index:
0
IRVIN, JC
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1968,
ED15
(12)
: 1009
-
+
[10]
DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
[J].
APPLIED PHYSICS LETTERS,
1966,
8
(02)
: 31
-
&
←
1
2
3
4
→