LOW-TEMPERATURE HYSTERESIS EFFECTS IN METAL-OXIDE-SILICON CAPACITORS CAUSED BY SURFACE-STATE TRAPPING

被引：88

作者：

GOETZBERGER, A

IRVIN, JC

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1968年 / ED15卷 / 12期

关键词：

D O I：

10.1109/T-ED.1968.16554

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1009 / +

页数：1

共 14 条

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