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BEHAVIOR OF MOS INVERSION LAYERS AT LOW TEMPERATURE

被引：34
作者：
GOETZBER.A
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1967年 / ED14卷 / 11期
关键词：
D O I：
10.1109/T-ED.1967.16109
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：787 / &
相关论文
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