RADIATION-INDUCED INCREASE IN SURFACE RECOMBINATION VELOCITY OF THERMALLY OXIDIZED SILICON STRUCTURES

被引：38

作者：

FITZGERA.DJ

GROVE, AS

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1966年 / 54卷 / 11期

关键词：

D O I：

10.1109/PROC.1966.5217

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1601 / +

页数：1

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