SURFACE STATE DENSITY VARIATIONS ON MOS STRUCTURES DUE TO GAMMA RADIATION

被引：5

作者：

MATTAUCH, RJ

LADE, RW

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1965年 / 53卷 / 11期

关键词：

D O I：

10.1109/PROC.1965.4365

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1748 / +

页数：1

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[5] LIMITATIONS OF MOS CAPACITANCE METHOD FOR DETERMINATION OF SEMICONDUCTOR SURFACE PROPERTIES
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) : 179 - +