LIMITATIONS OF MOS CAPACITANCE METHOD FOR DETERMINATION OF SEMICONDUCTOR SURFACE PROPERTIES

被引：122

作者：

ZAININGER, KH

WARFIELD, G

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1965年 / ED12卷 / 04期

关键词：

D O I：

10.1109/T-ED.1965.15476

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：179 / +

页数：1

相关论文

共 22 条

[1] IMPURITY REDISTRIBUTION AND JUNCTION FORMATION IN SILICON BY THERMAL OXIDATION
ATALLA, MM
TANNENBAUM, E
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (04): : 933 - 946
[2] BATH HM, 1958, B AM PHYS SOC, V3, P138
[3] BERZ F, 1959, J ELECTRON CONTR, V6, P97
[4] BROWN WL, 1959, SEMICONDUCTOR SURFAC, P111
[5] THE OXIDATION OF SILICON IN DRY OXYGEN, WET OXYGEN, AND STEAM
DEAL, BE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 527 - 533
[6] SOME EFFECTS OF MATERIAL PARAMETERS ON THE DESIGN OF SURFACE SPACE-CHARGE VARACTORS
FRANKL, DR
[J]. SOLID-STATE ELECTRONICS, 1961, 2 (01) : 71 - 76
[7] EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE
HEIMAN, FP
WARFIELD, G
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) : 167 - &
[8] HEIMAN FP, 1964, THESIS PRINCETON, P44
[9] PHYSICAL LIMITATIONS ON FREQUENCY RESPONSE OF A SEMICONDUCTOR SURFACE INVERSION LAYER
HOFSTEIN, SR
WARFIELD, G
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 321 - +
[10] FREQUENCY RESPONSE OF SURFACE INVERSION LAYER IN SILICON
HOFSTEIN, SR
ZAININGER, KH
WARFIELD, G
[J]. PROCEEDINGS OF THE IEEE, 1964, 52 (08) : 971 - &